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Part #: BL088N15THB
ActivePart Category:Power Field-Effect Transistors
Manufacturer:CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Description:Power Field-Effect Transistor, 113A I(D), 150V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
BL088N15THB SPECIFICATIONS
| Status | Active |
| Additional Feature | TUBE: 50 |
| Avalanche Energy Rating (Eas) (mJ) | 320.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 150.0000000000000000 |
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