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Part #: BL080N10THB
ActivePart Category:Power Field-Effect Transistors
Manufacturer:CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Description:Power Field-Effect Transistor, 100A I(D), 100V, 0.0082ohm, 1-Element, N-Channel, Silicon, Split Gate Trench Mosfet FET, TO-263AB
BL080N10THB SPECIFICATIONS
| Status | Active |
| Additional Feature | TUBE: 50 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
| Drain Current-Max (ID) (A) | 100.0000000000000000 |
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