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Part #: BL080N06DG
ActivePart Category:Power Field-Effect Transistors
Manufacturer:CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Description:Power Field-Effect Transistor, 88A I(D), 60V, 0.008ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, TO-252
BL080N06DG SPECIFICATIONS
| Status | Active |
| Additional Feature | TUBE : 80 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 60.0000000000000000 |
| Drain Current-Max (ID) (A) | 88.0000000000000000 |
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