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BL062N15TH Datasheet - CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD - Datasheets360.comPart #: BL062N15TH
ActivePart Category:Power Field-Effect Transistors
Manufacturer:CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Description:Power Field-Effect Transistor, 140A I(D), 150V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
BL062N15TH SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 1296.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 150.0000000000000000 |
| Drain Current-Max (ID) (A) | 140.0000000000000000 |
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