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BL040N03T-3DL8 Datasheet - CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD - Datasheets360.comPart #: BL040N03T-3DL8
ActivePart Category:Power Field-Effect Transistors
Manufacturer:CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Description:Power Field-Effect Transistor, 65A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BL040N03T-3DL8 SPECIFICATIONS
| Status | Active |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 30.0000000000000000 |
| Drain Current-Max (ID) (A) | 65.0000000000000000 |
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