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Part #: BL032N06THB
ActivePart Category:Power Field-Effect Transistors
Manufacturer:CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Description:Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Split Gate Trench Mosfet FET, TO-263AB
BL032N06THB SPECIFICATIONS
| Status | Active |
| Additional Feature | TUBE: 50 |
| Avalanche Energy Rating (Eas) (mJ) | 858.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 60.0000000000000000 |
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