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Part #: BL02N18E
ActivePart Category:Power Field-Effect Transistors
Manufacturer:CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Description:Power Field-Effect Transistor, 2A I(D), 180V, 0.5ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET
BL02N18E SPECIFICATIONS
| Status | Active |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 180.0000000000000000 |
| Drain Current-Max (ID) (A) | 2.0000000000000000 |
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