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BL024N03D Datasheet - CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD - Datasheets360.comPart #: BL024N03D
ActivePart Category:Power Field-Effect Transistors
Manufacturer:CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Description:Power Field-Effect Transistor, 130A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, TO-252
BL024N03D SPECIFICATIONS
| Status | Active |
| Additional Feature | TUBE: 80 |
| Avalanche Energy Rating (Eas) (mJ) | 168.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
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