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Part #: BG5120KE6327HTSA1
ActivePart Category:RF Small Signal Field-Effect Transistors
Manufacturer:INFINEON TECHNOLOGIES AG
Description:RF Small Signal Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
BG5120KE6327HTSA1 SPECIFICATIONS
| Status | Active |
| Additional Feature | LOW NOISE |
| Configuration | COMPLEX |
| DS Breakdown Voltage-Min (V) | 12.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.0200000000000000 |
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