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Part #: BFG235E6327
ObsoletePart Category:RF Power Bipolar Transistors
Manufacturer:INFINEON TECHNOLOGIES AG
Description:RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN
BFG235E6327 SPECIFICATIONS
| Status | Discontinued |
| Additional Feature | BUILT IN EMITTER BALLASTING RESISTOR |
| Case Connection | COLLECTOR |
| Collector Current-Max (IC) (A) | 0.3000000000000000 |
| Collector-base Capacitance-Max (pF) | 3.6000000000000000 |
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BFG235E6327 Datasheet - INFINEON TECHNOLOGIES AG - Datasheets360.com