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Part #: BB303M
OtherPart Category:RF Small Signal Field-Effect Transistors
Manufacturer:HITACHI LTD
Description:RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
BB303M SPECIFICATIONS
| Status | Transferred |
| Case Connection | SOURCE |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 7.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.0250000000000000 |
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