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Part #: ARF475FL
OtherPart Category:RF Power Field-Effect Transistors
Manufacturer:MICROSEMI CORP
Description:RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
ARF475FL SPECIFICATIONS
| Status | Transferred |
| Configuration | COMMON SOURCE, 2 ELEMENTS |
| DS Breakdown Voltage-Min (V) | 500.0000000000000000 |
| Drain Current-Max (ID) (A) | 10.0000000000000000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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