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APT50M85JVRE3 Datasheet - MICROSEMI CORP - Datasheets360.comPart #: APT50M85JVRE3
OtherPart Category:Power Bipolar Transistors
Manufacturer:MICROSEMI CORP
Description:Power Bipolar Transistor, 1-Element, N-Channel, Silicon, Plastic/Epoxy, 4 Pin
APT50M85JVRE3 SPECIFICATIONS
| Status | Transferred |
| Avalanche Energy Rating (Eas) (mJ) | 1300.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 500.0000000000000000 |
| Drain Current-Max (ID) (A) | 50.0000000000000000 |
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