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APT34N80B2C3G Datasheet - MICROSEMI CORP - Datasheets360.comPart #: APT34N80B2C3G
OtherPart Category:Power Field-Effect Transistors
Manufacturer:MICROSEMI CORP
Description:Power Field-Effect Transistor, 34A I(D), 800V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
APT34N80B2C3G SPECIFICATIONS
| Status | Transferred |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) (mJ) | 670.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
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