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Part #: AP9997GM
OtherPart Category:Power Field-Effect Transistors
Manufacturer:ADVANCED POWER ELECTRONICS CORP
Description:Power Field-Effect Transistor, 3A I(D), 95V, 0.11ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
AP9997GM SPECIFICATIONS
| Status | Contact Mfr |
| Additional Feature | ULTRA LOW RESISTANCE |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 95.0000000000000000 |
| Drain Current-Max (ID) (A) | 3.0000000000000000 |
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