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AP80SL990BJB Datasheet - ADVANCED POWER ELECTRONICS CORP - Datasheets360.comPart #: AP80SL990BJB
OtherPart Category:Power Field-Effect Transistors
Manufacturer:ADVANCED POWER ELECTRONICS CORP
Description:Power Field-Effect Transistor, 5.7A I(D), 800V, 0.99ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
AP80SL990BJB SPECIFICATIONS
| Status | Contact Mfr |
| Avalanche Energy Rating (Eas) (mJ) | 75.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 800.0000000000000000 |
| Drain Current-Max (ID) (A) | 5.7000000000000000 |
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