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Part #: AP65WN770P
OtherPart Category:Power Field-Effect Transistors
Manufacturer:ADVANCED POWER ELECTRONICS CORP
Description:Power Field-Effect Transistor, 10A I(D), 650V, 0.77ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
AP65WN770P SPECIFICATIONS
| Status | Contact Mfr |
| Avalanche Energy Rating (Eas) (mJ) | 80.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 650.0000000000000000 |
| Drain Current-Max (ID) (A) | 10.0000000000000000 |
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