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Part #: AP4959GM
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:ADVANCED POWER ELECTRONICS CORP
Description:Power Field-Effect Transistor, 4.7A I(D), 16V, 0.065ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
AP4959GM SPECIFICATIONS
| Status | Discontinued |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 16.0000000000000000 |
| Drain Current-Max (ID) (A) | 4.7000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0650000000000000 |
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