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Part #: AP4955GM
OtherPart Category:Power Field-Effect Transistors
Manufacturer:ADVANCED POWER ELECTRONICS CORP
Description:Power Field-Effect Transistor, 5.6A I(D), 20V, 0.045ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
AP4955GM SPECIFICATIONS
| Status | Contact Mfr |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
| Drain Current-Max (ID) (A) | 5.6000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0450000000000000 |
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Equivalent Parts: Part #AP4955GM
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