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AP2P052Y Datasheet - ADVANCED POWER ELECTRONICS CORP - Datasheets360.comPart #: AP2P052Y
OtherPart Category:Power Field-Effect Transistors
Manufacturer:ADVANCED POWER ELECTRONICS CORP
Description:Power Field-Effect Transistor, 5.1A I(D), 20V, 0.052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
AP2P052Y SPECIFICATIONS
| Status | Contact Mfr |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
| Drain Current-Max (ID) (A) | 5.1000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0520000000000000 |
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