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AP2532GY Datasheet - ADVANCED POWER ELECTRONICS CORP - Datasheets360.comPart #: AP2532GY
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:ADVANCED POWER ELECTRONICS CORP
Description:Power Field-Effect Transistor, 2.4A I(D), 30V, 0.13ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
AP2532GY SPECIFICATIONS
| Status | Discontinued |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 30.0000000000000000 |
| Drain Current-Max (ID) (A) | 2.4000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.1300000000000000 |
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