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Part #: AP2334GN
OtherPart Category:Power Field-Effect Transistors
Manufacturer:ADVANCED POWER ELECTRONICS CORP
Description:Power Field-Effect Transistor, 30V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
AP2334GN SPECIFICATIONS
| Status | Contact Mfr |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 30.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0280000000000000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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