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Part #: AO6602L
OtherPart Category:Power Field-Effect Transistors
Manufacturer:ALPHA & OMEGA SEMICONDUCTOR LTD
Description:Power Field-Effect Transistor, 3.1A I(D), 30V, 0.075ohm, 2-Element, N-Channel and P-Channel, Silicon, Trench Mosfet FET
AO6602L SPECIFICATIONS
| Status | Unknown |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 30.0000000000000000 |
| Drain Current-Max (ID) (A) | 3.1000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0750000000000000 |
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