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Part #: AIMW120R080M1
OtherPart Category:Power Field-Effect Transistors
Manufacturer:INFINEON TECHNOLOGIES AG
Description:Power Field-Effect Transistor, 33A I(D), 1200V, 0.104ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247
AIMW120R080M1 SPECIFICATIONS
| Status | Unknown |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 1200.0000000000000000 |
| Drain Current-Max (ID) (A) | 33.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.1040000000000000 |
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