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Part #: AGR21060EF
OtherPart Category:RF Power Field-Effect Transistors
Manufacturer:BROADCOM INC
Description:RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
AGR21060EF SPECIFICATIONS
| Status | Unknown |
| Additional Feature | HIGH RELIABILITY |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 65.0000000000000000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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Equivalent Parts: Part #AGR21060EF
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