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Part #: AGR19180EF
OtherPart Category:RF Power Field-Effect Transistors
Manufacturer:AGERE SYSTEMS INC
Description:RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
AGR19180EF SPECIFICATIONS
| Status | Transferred |
| Additional Feature | HIGH RELIABILITY |
| Case Connection | SOURCE |
| Configuration | COMMON SOURCE, 2 ELEMENTS |
| DS Breakdown Voltage-Min (V) | 65.0000000000000000 |
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