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934066845115 Datasheet - NXP SEMICONDUCTORS - Datasheets360.comPart #: 934066845115
OtherPart Category:Power Field-Effect Transistors
Manufacturer:NXP SEMICONDUCTORS
Description:Power Field-Effect Transistor, 3.6A I(D), 20V, 0.067ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
934066845115 SPECIFICATIONS
| Status | Transferred |
| Case Connection | DRAIN |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
| Drain Current-Max (ID) (A) | 3.6000000000000000 |
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