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Part #: 8N60G-E-TF2-T
OtherPart Category:Power Field-Effect Transistors
Manufacturer:UNISONIC TECHNOLOGIES CO LTD
Description:Power Field-Effect Transistor, 8A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
8N60G-E-TF2-T SPECIFICATIONS
| Status | Unknown |
| Avalanche Energy Rating (Eas) (mJ) | 160 |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 600 |
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