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Part #: 4N70L-E-TMN2-T
ActivePart Category:Power Field-Effect Transistors
Manufacturer:UNISONIC TECHNOLOGIES CO LTD
Description:Power Field-Effect Transistor, 4.4A I(D), 700V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
4N70L-E-TMN2-T SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 160.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 700.0000000000000000 |
| Drain Current-Max (ID) (A) | 4.4000000000000000 |
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