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Part #: 4AM11
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:RENESAS TECHNOLOGY CORP
Description:Power Field-Effect Transistor, 5A I(D), 60V, 0.24ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
4AM11 SPECIFICATIONS
| Status | Discontinued |
| Configuration | 2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 60.0000000000000000 |
| Drain Current-Max (ID) (A) | 5.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.2400000000000000 |
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