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4AK23 Datasheet - RENESAS TECHNOLOGY CORP - Datasheets360.comPart #: 4AK23
OtherPart Category:Power Field-Effect Transistors
Manufacturer:RENESAS TECHNOLOGY CORP
Description:Power Field-Effect Transistor, 5A I(D), 100V, 0.35ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
4AK23 SPECIFICATIONS
| Status | Transferred |
| Configuration | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
| Drain Current-Max (ID) (A) | 5.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.3500000000000000 |
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