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Part #: 4AK17
OtherPart Category:Power Field-Effect Transistors
Manufacturer:HITACHI LTD
Description:Power Field-Effect Transistor, 10A I(D), 60V, 0.065ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
4AK17 SPECIFICATIONS
| Status | Transferred |
| Configuration | 2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 60.0000000000000000 |
| Drain Current-Max (ID) (A) | 10.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0650000000000000 |
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