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Part #: 2SK958
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:FUJI ELECTRIC CO LTD
Description:Power Field-Effect Transistor, 2A I(D), 900V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
2SK958 SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 900.0000000000000000 |
| Drain Current-Max (ID) (A) | 2.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 8.5000000000000000 |
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