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Part #: 2SK676H5-3
ObsoletePart Category:RF Small Signal Field-Effect Transistors
Manufacturer:SONY CORP
Description:RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
2SK676H5-3 SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 5.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.0700000000000000 |
| FET Technology | HIGH ELECTRON MOBILITY |
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Equivalent Parts: Part #2SK676H5-3
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