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2SK666 Datasheet - HITACHI LTD - Datasheets360.comPart #: 2SK666
ObsoletePart Category:RF Small Signal Field-Effect Transistors
Manufacturer:HITACHI LTD
Description:RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Junction FET
2SK666 SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE WITH BUILT-IN RESISTOR AND CAPACITOR |
| DS Breakdown Voltage-Min (V) | 4.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.1500000000000000 |
| FET Technology | JUNCTION |
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