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Part #: 2SK3564
OtherPart Category:Power Field-Effect Transistors
Manufacturer:TOSHIBA CORP
Description:Power Field-Effect Transistor, 3A I(D), 900V, 4.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
2SK3564 SPECIFICATIONS
| Status | Unknown |
| Avalanche Energy Rating (Eas) (mJ) | 408 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 900 |
| Drain Current-Max (ID) (A) | 3 |
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2SK3564 Datasheet & Equivalents - TOSHIBA CORP - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #2SK3564
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