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Part #: 2SK3399
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:TOSHIBA CORP
Description:Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
2SK3399 SPECIFICATIONS
| Status | Discontinued |
| Avalanche Energy Rating (Eas) (mJ) | 363.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 600.0000000000000000 |
| Drain Current-Max (ID) (A) | 10.0000000000000000 |
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Equivalent Parts: Part #2SK3399
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