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Part #: 2SK2595AXTB
OtherPart Category:RF Power Field-Effect Transistors
Manufacturer:RENESAS ELECTRONICS CORP
Description:RF Power Field-Effect Transistor, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
2SK2595AXTB SPECIFICATIONS
| Status | Unknown |
| DS Breakdown Voltage-Min (V) | 17.0000000000000000 |
| Drain Current-Max (ID) (A) | 1.1000000000000000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
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2SK2595AXTB Datasheet & Equivalents - RENESAS ELECTRONICS CORP - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #2SK2595AXTB
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