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Part #: 2SK2595AXTB
OtherPart Category:RF Power Field-Effect Transistors
Manufacturer:HITACHI LTD
Description:RF Power Field-Effect Transistor, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
2SK2595AXTB SPECIFICATIONS
| Status | Transferred |
| DS Breakdown Voltage-Min (V) | 17.0000000000000000 |
| Drain Current-Max (ID) (A) | 1.1000000000000000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
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