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Part #: 2SK1933
OtherPart Category:Power Field-Effect Transistors
Manufacturer:HITACHI LTD
Description:Power Field-Effect Transistor, 10A I(D), 1.2ohm, 1-Element, N-Channel, Metal-oxide Semiconductor FET
2SK1933 SPECIFICATIONS
| Status | Transferred |
| Configuration | SINGLE |
| Drain Current-Max (ID) (A) | 10.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 1.2000000000000000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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