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2SK1527-E1-E Datasheet - RENESAS ELECTRONICS CORP - Datasheets360.comPart #: 2SK1527-E1-E
OtherPart Category:Power Field-Effect Transistors
Manufacturer:RENESAS ELECTRONICS CORP
Description:Power Field-Effect Transistor, 40A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
2SK1527-E1-E SPECIFICATIONS
| Status | Unknown |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 500.0000000000000000 |
| Drain Current-Max (ID) (A) | 40.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.1600000000000000 |
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