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Part #: 2SJ680
OtherPart Category:Power Field-Effect Transistors
Manufacturer:TOSHIBA CORP
Description:Power Field-Effect Transistor, 2.5A I(D), 200V, 2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
2SJ680 SPECIFICATIONS
| Status | Unknown |
| Avalanche Energy Rating (Eas) (mJ) | 97.5 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 200 |
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