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Part #: 2SJ676
OtherPart Category:Power Field-Effect Transistors
Manufacturer:TOSHIBA CORP
Description:Power Field-Effect Transistor, 2.5A I(D), 200V, 2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
2SJ676 SPECIFICATIONS
| Status | Unknown |
| Avalanche Energy Rating (Eas) (mJ) | 191.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 200.0000000000000000 |
| Drain Current-Max (ID) (A) | 2.5000000000000000 |
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2SJ676 Datasheet - TOSHIBA CORP - Datasheets360.com