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Part #: 2SJ512
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:TOSHIBA CORP
Description:Power Field-Effect Transistor, 5A I(D), 250V, 1.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
2SJ512 SPECIFICATIONS
| Status | Discontinued |
| Avalanche Energy Rating (Eas) (mJ) | 155.0000000000000000 |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 250.0000000000000000 |
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