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Part #: 2SJ410-E
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:RENESAS ELECTRONICS CORP
Description:Power Field-Effect Transistor, 6A I(D), 200V, 0.85ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
2SJ410-E SPECIFICATIONS
| Status | Discontinued |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 200.0000000000000000 |
| Drain Current-Max (ID) (A) | 6.0000000000000000 |
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