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2SJ135 Datasheet - RENESAS ELECTRONICS CORP - Datasheets360.comPart #: 2SJ135
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:RENESAS ELECTRONICS CORP
Description:Power Field-Effect Transistor, 5A I(D), 100V, 0.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
2SJ135 SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
| Drain Current-Max (ID) (A) | 5.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.9000000000000000 |
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