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Part #: 2SJ127
OtherPart Category:Power Field-Effect Transistors
Manufacturer:HITACHI LTD
Description:Power Field-Effect Transistor, 10A I(D), 120V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
2SJ127 SPECIFICATIONS
| Status | Transferred |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 120.0000000000000000 |
| Drain Current-Max (ID) (A) | 10.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.2500000000000000 |
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