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Part #: 2N7615U6
ActivePart Category:Power Field-Effect Transistors
Manufacturer:INFINEON TECHNOLOGIES AG
Description:Power Field-Effect Transistor, 2.6A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
2N7615U6 SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 38.5000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 250.0000000000000000 |
| Drain Current-Max (ID) (A) | 2.6000000000000000 |
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2N7615U6 Datasheet - INFINEON TECHNOLOGIES AG - Datasheets360.com