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2N7082-2 Datasheet - VISHAY INTERTECHNOLOGY INC - Datasheets360.comPart #: 2N7082-2
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:VISHAY INTERTECHNOLOGY INC
Description:Power Field-Effect Transistor, 9A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB
2N7082-2 SPECIFICATIONS
| Status | Discontinued |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 200.0000000000000000 |
| Drain Current-Max (ID) (A) | 9.0000000000000000 |
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