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Part #: 2N7002/E8
ObsoletePart Category:Small Signal Field-Effect Transistors
Manufacturer:GENERAL SEMICONDUCTOR INC
Description:Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
2N7002/E8 SPECIFICATIONS
| Status | Discontinued |
| Additional Feature | HIGH INPUT IMPEDENCE |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 60.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.2300000000000000 |
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2N7002/E8 Datasheet & Equivalents - GENERAL SEMICONDUCTOR INC - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #2N7002/E8
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